Degenerate Resistive Switching and Ultrahigh Density Storage in Resistive Memory

摘要

We show that, in tantalum oxide resistive memories, activation power providesa multi-level variable for information storage that can be set and readseparately from the resistance. These two state variables (resistance andactivation power) can be precisely controlled in two steps: (1) the possibleactivation power states are selected by partially reducing resistance, then (2)a subsequent partial increase in resistance specifies the resistance state andthe final activation power state. We show that these states can be preciselywritten and read electrically, making this approach potentially amenable forultra-high density memories. We provide a theoretical explanation forinformation storage and retrieval from activation power and experimentallydemonstrate information storage in a third dimension related to the change inactivation power with resistance.